cystech electronics corp. spec. no. : c394dfj6 issued date : 2015.09.03 revised date : page no. : 1/9 MTA050P02DFJ6 cystek product specification -20v p-channel enhancement mode mosfet MTA050P02DFJ6 bv dss -20v i d @v gs =-4.5v, t c =25 c -14.2a i d @v gs =-4.5v, t a =25 c -5.2a r dson @v gs =-4.5v, i d =-3a 33.4m (typ.) r dson @v gs =-2.5v, i d =-3a 46.4m (typ.) r dson @v gs =-1.8v, i d =-3a 71.4m (typ.) features ? low on-resistance ? excellent thermal and electrical capabilities ? pb-free lead plating and halogen-free package equivalent circuit outline dfnwb2 2-6l-j MTA050P02DFJ6 g gate s source d drain ordering information device package shipping MTA050P02DFJ6-0-t1-g dfnwb2 2-6l-j (pb-free lead plating and halogen-free package) 3000 pcs / tape & reel environment friendly grade : s for rohs compliant products, g for rohs compliant and green compound products packing spec, t1 : 3000 pcs / tape & reel,7? reel product rank, zero for no rank products product name
cystech electronics corp. spec. no. : c394dfj6 issued date : 2015.09.03 revised date : page no. : 2/9 MTA050P02DFJ6 cystek product specification absolute maximum ratings (ta=25 c) parameter symbol limits unit drain-source voltage v ds -20 gate-source voltage v gs 12 v continuous drain current @ t a =25 c, v gs =-4.5v (note 3) -5.2 continuous drain current @ t a =70 c, v gs =-4.5v (note 3) i dsm -4.2 continuous drain current @ t c =25 c, v gs =-4.5v -14.2 continuous drain current @ t c =70 c, v gs =-4.5v i d -11.4 pulsed drain current (note 1, 2) i dm -20 a power dissipation @ t a =25 w (note 3) 2.1 power dissipation @ t a =70 w (note 3) p dsm 1.3 power dissipation @ t c =25 w 15.6 power dissipation @ t c =70 w p d 10 w operating junction and storage temperature tj, tstg -55~+150 c thermal data parameter symbol value unit thermal resistance, junction-to-case, max r th,j-c 8 thermal resistance, junction-to-ambient, max r th,j-a 60 (note 3) c/w note : 1. pulse width limited by maximum junction temperature 2. duty cycle 1% 3. surface mounted on 1 in2 copper pad of fr-4 board. electrical characteristics (ta=25 c) symbol min. typ. max. unit test conditions static bv dss -20 - - v gs =0v, i d =-250 a v gs(th) -0.5 - -1.0 v v ds =v gs , i d =-250 a i gss - - 2 100 na v gs = 2 12v, v ds =0v - - -1 v ds =-20v, v gs =0v i dss - - -10 a v ds =-20v, v gs =0v, tj=55 c - 33.4 44 v gs =-4.5v, i d =-3a - 46.4 60 v gs =-2.5v, i d =-3a *r ds(on) - 71.4 92 m v gs =-1.8v, i d =-3a *g fs - 5.7 - s v ds =-10v, i d =-3a dynamic ciss - 1095 - coss - 88 - crss - 68 - pf v ds =-10v, v gs =0v, f=1mhz t d(on) - 11.8 - t r - 21.8 - t d(off) - 91.8 - t f - 33.4 - ns v ds =-10v, i d =-3a, v gs =-4.5v, r g =2
cystech electronics corp. spec. no. : c394dfj6 issued date : 2015.09.03 revised date : page no. : 3/9 MTA050P02DFJ6 cystek product specification qg - 11.4 - qgs - 2 - qgd - 2.2 - nc v ds =-10v, i d =-3a, v gs =-4.5v rg - 20 - f=1mhz source-drain diode *v sd - -0.84 -1.0 v v gs =0v, i s =-3a *trr - 6.8 - ns *qrr - 3.1 - nc i f =-3a, di f /dt=100a/ s *pulse test : pulse width 300 s, duty cycle 2% recommended soldering footprint
cystech electronics corp. spec. no. : c394dfj6 issued date : 2015.09.03 revised date : page no. : 4/9 MTA050P02DFJ6 cystek product specification typical characteristics typical output characteristics 0 4 8 12 16 20 012345678910 -v ds , drain-source voltage(v) -i d , drain current (a) 2 v -v gs =1.5v 2. 5v 5 v, 4v, 3v brekdown voltage vs ambient temperature 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) -bv dss , normalized drain-source breakdown voltage i d =-250 a, v gs =0v static drain-source on-state resistance vs drain current 0 10 20 30 40 50 60 70 80 90 100 0.1 1 10 100 -i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) -v gs =2.5v -v gs =4.5v -v gs =10v -v gs =1.8v reverse drain current vs source-drain voltage 0 0.2 0.4 0.6 0.8 1 012345678910 -i dr , reverse drain current (a) -v sd , source-drain voltage(v) tj=25c tj=150c v gs =0v static drain-source on-state resistance vs gate-source voltage 0 20 40 60 80 100 120 140 160 180 200 024681 0 -v gs , gate-source voltage(v) r ds(on) , static drain-source on- state resistance(m) -i d =3a drain-source on-state resistance vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) r ds(on) , normalized static drain- source on-state resistance v gs =-4.5, i d =-3a r ds( on) @tj=25c : 33.4m typ.
cystech electronics corp. spec. no. : c394dfj6 issued date : 2015.09.03 revised date : page no. : 5/9 MTA050P02DFJ6 cystek product specification typical characteristics(cont.) capacitance vs drain-to-source voltage 10 100 1000 10000 0.1 1 10 100 -v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) -v gs(th) , normalized threshold voltage -i d =250 a -i d =1ma forward transfer admittance vs drain current 0.01 0.1 1 10 0.001 0.01 0.1 1 10 -i d , drain current(a) g fs , forward transfer admittance(s) ta=25c pulsed v ds =-10v maximum drain current vs junction temperature 0 1 2 3 4 5 6 25 50 75 100 125 150 175 tj, junction temperature(c) -i d , maximum drain current(a) t a =25c, v gs =-4.5v, r ja =60c/w single pulse maximum safe operating area 0.01 0.1 1 10 100 0.01 0.1 1 10 100 -v ds , drain-source voltage(v) -i d , drain current (a) dc 10ms 1ms 100 s t a =25c, tj=150c, v gs =-4.5v, r ja =60c/w single pulse r ds( on) limited gate charge characteristics 0 2 4 6 8 10 0 5 10 15 20 25 30 qg, total gate charge(nc) -v gs , gate-source voltage(v) v ds =-10v i d =-3a
cystech electronics corp. spec. no. : c394dfj6 issued date : 2015.09.03 revised date : page no. : 6/9 MTA050P02DFJ6 cystek product specification typical characteristics(cont.) typical transfer characteristics 0 4 8 12 16 20 012345 -v gs , gate-source voltage(v) -i d , drain current (a) -v ds =5v single pulse power rating, junction to case 0 50 100 150 200 250 300 350 400 450 500 0.0001 0.001 0.01 0.1 1 10 100 pulse width(s) power (w) t j(max) =150c t a =25c r ja =60c/w transient thermal response curves 0.001 0.01 0.1 1 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 t 1 , square wave pulse duration(s) r(t), normalized transient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r ja (t)=r(t)*r ja 2.duty factor, d=t 1 /t 2 3.t jm -t a =p dm *r ja (t) 4.r ja =60 c/w
cystech electronics corp. spec. no. : c394dfj6 issued date : 2015.09.03 revised date : page no. : 7/9 MTA050P02DFJ6 cystek product specification reel dimension carrier tape dimension pin #1
cystech electronics corp. spec. no. : c394dfj6 issued date : 2015.09.03 revised date : page no. : 8/9 MTA050P02DFJ6 cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of the package, measured on the package body surface.
cystech electronics corp. spec. no. : c394dfj6 issued date : 2015.09.03 revised date : page no. : 9/9 MTA050P02DFJ6 cystek product specification dfnwb2 2-6l-j dimension marking: style: pin 1.drain 2.drain 3.gate 4.source 5.drain 6.drain 6-lead dfnwb2 2-6l-j plastic surface mounted package cystek package code: dfj6 a50p device code date code millimeters inches millimeters inches dim min. max. min. max. dim min. max. min. max. a 0.700 0.800 0.028 0.031 d2 0.200 0.400 0.008 0.016 a1 0.000 0.050 0.000 0.002 e2 0.460 0.660 0.018 0.026 a3 0.203 ref 0.008 ref k 0.200 - 0.008 - d 1.924 2.076 0.076 0.082 b 0.250 0.350 0.010 0.014 e 1.924 2.076 0.076 0.082 e 0.650 typ 0.026 typ d1 0.800 1.000 0.031 0.039 l 0.174 0.326 0.007 0.013 e1 0.850 1.050 0.033 0.041 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing spec ification or packing method, please cont act your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitab le for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
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